stdClass Object
(
    [id] => 6928
    [paper_index] => 202205-01-010152
    [title] => ELECTRONIC PROPERTIES OF A SEMICONDUCTOR TWO-BARRIER STRUCTURE
    [description] => 
    [author] => Voxob Rustamovich Rasulov, Rustam Yavkachovich Rasulov, Mamatova Mahliyo Adhamovna, Nurillo Ubaydullo o'g'li Kodirov
    [googlescholar] => https://scholar.google.co.in/scholar?cluster=10319500508812363240&hl=en&as_sdt=0,5
    [doi] => https://doi.org/10.36713/epra10152
    [year] => 2022
    [month] => May
    [volume] => 8
    [issue] => 5
    [file] => 918pm_12.EPRA JOURNALS 10152.pdf
    [abstract] => The dependence of the transmission coefficient for an electron with energy E tunneling through a potential barrier of finite height and thickness in a two-barrier semiconductor structure is calculated, and it is shown that this dependence has an oscillatory character.
On the basis of the continuity equation, the energy dependence of the frequency of electron collisions with the walls of the size-quantized potential is analyzed.

    [keywords] =>  transmission coefficient, two-barrier semiconductor structure, size quantization, energy spectrum, potential well.
    [doj] => 2022-05-11
    [hit] => 1204
    [status] => y
    [award_status] => P
    [orderr] => 12
    [journal_id] => 1
    [googlesearch_link] => 
    [edit_on] => 
    [is_status] => 1
    [journalname] => EPRA International Journal of Multidisciplinary Research (IJMR)
    [short_code] => IJMR
    [eissn] =>  2455-3662 (Online)
    [pissn] => - --
    [home_page_wrapper] => images/products_image/11.IJMR.png
)
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