stdClass Object
(
    [id] => 7190
    [paper_index] => 202206-01-010584
    [title] => THEORY OF THE CURRENT-VOLTAGE CHARACTERISTIC OF A THREE-LAYER SEMICONDUCTOR DIODE UNDER THE ACTION OF AN ELECTRIC FIELD 
    [description] => 
    [author] => Voxob Rustamovich Rasulov,Rustam Yavkachovich Rasulov,Mamatova Mahliyo Adhamovna, XudoyberdiyevaMuhayyoxon Zoirjon qizi
    [googlescholar] => https://scholar.google.co.in/scholar?q=eprajournals.com&hl=en&scisbd=2&as_sdt=0,5
    [doi] => https://doi.org/10.36713/epra10584
    [year] => 2022
    [month] => June
    [volume] => 8
    [issue] => 6
    [file] => 942pm_45.EPRA JOURNALS 10584.pdf
    [abstract] => The current-voltage characteristic of a long three-layer semiconductor diode of the type: p+−n−n+, p+−n−p+, n+−n−n+, etc. has been calculated. Expressions are obtained for the current-voltage characteristic of a three-layer semiconductor structure, the base of which is made of a compensated semiconductor, taking into account the strength of the external electric field. It is shown that due to the presence of zero, minus and plus charged impurities in a compensated semiconductor, the dependence of the concentration of electrons and holes is non-linear.
    [keywords] => current-voltage characteristic, semiconductor structure, electrons and holes.
    [doj] => 2022-06-23
    [hit] => 1696
    [status] => y
    [award_status] => P
    [orderr] => 45
    [journal_id] => 1
    [googlesearch_link] => 
    [edit_on] => 
    [is_status] => 1
    [journalname] => EPRA International Journal of Multidisciplinary Research (IJMR)
    [short_code] => IJMR
    [eissn] =>  2455-3662 (Online)
    [pissn] => - --
    [home_page_wrapper] => images/products_image/11.IJMR.png
)
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