stdClass Object
(
    [id] => 12024
    [paper_index] => 202312-02-015335
    [title] => MODERN STATE OF PHYSICS IN THE RESEARCH OF MICRO-PLASMA BREAKDOWN IN SILICON P-N JUNCTIONS AND DIODES AND SCHOTTTKY
    [description] => 
    [author] => Tagaev Marat, Abdreymov Ali
    [googlescholar] => https://scholar.google.co.in/scholar?cluster=13505704780961991646&hl=en&as_sdt=0,5
    [doi] => 
    [year] => 2023
    [month] => December
    [volume] => 8
    [issue] => 12
    [file] => 635pm_71.EPRA JOURNALS 15335.pdf
    [abstract] =>   The reliability of semiconductor devices is primarily determined by the degree of perfection of the source material at the same time and very much depends on the technological processing methods used. Dislocations in the crystal structure are generated due to the occurrence of internal stresses, leading to plastic deformation of the material. Numerous studies have shown that one of the main causes of degradation and failure of semiconductor devices is the presence of internal mechanical stresses in them, the relaxation of which is accompanied by the appearance of structural defects.
    [keywords] => silicon, germanium, internal stresses, misfit dislocations.
    [doj] => 2023-12-30
    [hit] => 723
    [status] => y
    [award_status] => P
    [orderr] => 71
    [journal_id] => 2
    [googlesearch_link] => https://www.google.com/search?q=MODERN+STATE+OF+PHYSICS+IN+THE+RESEARCH+OF+MICRO-PLASMA+BREAKDOWN+IN+SILICON+P-N+JUNCTIONS+AND+DIODES+AND+SCHOTTTKY+Tagaev+Marat%2C+Abdreymov+Ali&rlz=1C1CHBD_enIN959IN959&sourceid=chrome&ie=UTF-8
    [edit_on] => 
    [is_status] => 1
    [journalname] => EPRA International Journal of Research & Development (IJRD)
    [short_code] => IJSR
    [eissn] =>  2455-7838 (Online)
    [pissn] => - -
    [home_page_wrapper] => images/products_image/2-n.png
)
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