stdClass Object
(
    [id] => 4733
    [paper_index] => 202104-02-006688
    [title] => SUBTHRESHOLD CONDITION IN MOSFET
    [description] => 
    [author] => Karan niketan Dixit
    [googlescholar] => https://scholar.google.co.in/scholar?as_ylo=2021&q=eprajournals.com&hl=en&as_sdt=0,5
    [doi] => 
    [year] => 2021
    [month] => April
    [volume] => 6
    [issue] => 4
    [file] => 1154pm_17.EPRA JOURNALS-6688.pdf
    [abstract] => Sub-threshold conduction is an important consideration when dealing with modern devices, especially due to the trend towards increasingly smaller device sizes. Shorter channels have adverse effects on sub-threshold swing, affecting device operation in this region. Analog designers would like a smooth and accurate model in order to properly utilize this highly efficient operating region, while digital designers would prefer to understand methods to minimize channel conduction when a device is in sub-threshold. This paper will review previously published works that discuss analytical models for different sub-threshold concerns, including short-channel effects and the effects due to barrier-lowering. Experimental data is also presented which verifies some of these selected models. Finally, areas for further research into this operating region will be presented.
    [keywords] => 
    [doj] => 2021-04-13
    [hit] => 18386
    [status] => y
    [award_status] => P
    [orderr] => 17
    [journal_id] => 2
    [googlesearch_link] => 
    [edit_on] => 
    [is_status] => 1
    [journalname] => EPRA International Journal of Research & Development (IJRD)
    [short_code] => IJSR
    [eissn] =>  2455-7838 (Online)
    [pissn] => - -
    [home_page_wrapper] => images/products_image/2-n.png
)
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