stdClass Object
(
[id] => 4733
[paper_index] => 202104-02-006688
[title] => SUBTHRESHOLD CONDITION IN MOSFET
[description] =>
[author] => Karan niketan Dixit
[googlescholar] => https://scholar.google.co.in/scholar?as_ylo=2021&q=eprajournals.com&hl=en&as_sdt=0,5
[doi] =>
[year] => 2021
[month] => April
[volume] => 6
[issue] => 4
[file] => 1154pm_17.EPRA JOURNALS-6688.pdf
[abstract] => Sub-threshold conduction is an important consideration when dealing with modern devices, especially due to the trend towards increasingly smaller device sizes. Shorter channels have adverse effects on sub-threshold swing, affecting device operation in this region. Analog designers would like a smooth and accurate model in order to properly utilize this highly efficient operating region, while digital designers would prefer to understand methods to minimize channel conduction when a device is in sub-threshold. This paper will review previously published works that discuss analytical models for different sub-threshold concerns, including short-channel effects and the effects due to barrier-lowering. Experimental data is also presented which verifies some of these selected models. Finally, areas for further research into this operating region will be presented.
[keywords] =>
[doj] => 2021-04-13
[hit] => 19500
[status] => y
[award_status] => P
[orderr] => 17
[journal_id] => 2
[googlesearch_link] =>
[edit_on] =>
[is_status] => 1
[journalname] => EPRA International Journal of Research & Development (IJRD)
[short_code] => IJSR
[eissn] => 2455-7838 (Online)
[pissn] => - -
[home_page_wrapper] => images/products_image/2-n.png
)
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