MODELING MICROPLASMAS P-N JUNCTION
Tagaev M.B., Abdreymov A.A.
-, Karakalpak State University named after Berdakh
Indeed, already in the very first studies of the avalanche breakdown of p-n junctions and Schottky diodes, it was shown that the breakdown in them is highly localized. The local breakdown region has small geometric dimensions and significantly lower breakdown voltage compared to homogeneous regions). Despite the fact that the processes of microplasma breakdown were studied in a number of works [1;2;3], the clarity both in the mechanisms of the occurrence of an MF and their influence on the degradation processes has not been fully studied. If a voltage V is applied to the n-region of a p-n junction, in relation to the potential of the p-region, then such a p-n junction is called back-biased . If the breakdown voltage of the microplasma Vm through the p-n junction will flow in the form of pulses with an average frequency of 104 -105 Hz [5;6].
Journal Name :
EPRA International Journal of Multidisciplinary Research (IJMR)
Published on : 2022-06-16